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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 1039 | On Request | On Request |
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| SVHC Present |
The PSMN014-60LS from NXP Semiconductors is an N-Channel MOSFET suitable for various power switching applications. It offers a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 40A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 14mOhm at 10A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 1mA, and a maximum gate-to-source voltage of ±20V. The component has a maximum power dissipation of 65W (Tc).
Packaged in an 8-DFN3333 (3.3x3.3) surface-mount package, the PSMN014-60LS operates within a temperature range of -55°C to 150°C (TJ). Its input capacitance (Ciss) is 1264pF at 30V, and gate charge (Qg) is 19.6nC at 10V.
This MOSFET is RoHS3 compliant and has an MSL rating of 1.
60V.
8-VDFN Exposed Pad (8-DFN3333, 3.3x3.3mm).
-55°C to 150°C (junction temperature).
40A at 25°C case temperature.
14mOhm maximum at 10A drain current and 10V gate drive.
19.6nC maximum at 10V gate voltage.
Surface mount.