| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,100 pcs
|
14100 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The PSMN013-100PS from NXP Semiconductors is a standard level N-channel MOSFET designed for industrial, communications, and domestic equipment. It operates with a drain-source voltage of up to 100V and a continuous drain current of 68A at 25°C.
Key electrical characteristics include a low typical on-state resistance of 10.8mΩ at 25°C and 13.9mΩ at 100°C, both measured at 15A drain current and 10V gate-source voltage. This contributes to high efficiency due to low switching and conduction losses. The MOSFET also offers improved dynamic avalanche performance and is suitable for standard level gate drive.
Packaged in a TO-220AB through-hole package, the PSMN013-100PS is qualified to 175°C junction temperature. Its applications include DC-to-DC converters, load switching, motor control, and server power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 100V.
The maximum continuous drain current (ID) is 68A at 25°C case temperature with VGS=10V.
The typical on-state resistance (RDSon) is 10.8mΩ at VGS=10V, ID=15A, and Tj=25°C.
It is available in a TO-220AB package with through-hole mounting.
The maximum junction temperature (Tj) is 175°C.
The typical total gate charge (QG(tot)) is 59nC at VGS=10V, ID=25A, and VDS=50V.