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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The PSMN013-100BS from NXP Semiconductors is a standard level N-channel MOSFET qualified for operation up to 175°C. This device is designed for high efficiency applications, featuring low switching and conduction losses.
Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 68A at 25°C. The drain-source on-state resistance is a low 13.9mΩ typical at 25°C. Dynamic characteristics include a typical gate-drain charge of 17nC and a total gate charge of 59nC.
This MOSFET is suitable for standard level gate drive and is designed for use in a wide range of industrial, communications, and domestic equipment. Applications include DC-to-DC converters, load switching, motor control, and server power supplies.
The component is housed in a D2PAK (SOT404) surface-mounted package, connected to the drain via the mounting base.
The maximum drain-source voltage is 100V.
The continuous drain current is 68A.
The typical drain-source on-state resistance is 10.8mΩ.
The maximum operating temperature is 175°C.
The PSMN013-100BS is supplied in a D2PAK package.
Applications include DC-to-DC converters, load switching, motor control, and server power supplies.