| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The Nexperia PSMN009-100P,127 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed for computing, communications, consumer, and industrial applications.
Key electrical specifications include a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 75A at 25°C, and a maximum drain-source on-resistance (Rds On) of 8.8mOhm at 25A and 10V gate-source voltage. The device features low conduction losses due to its low on-state resistance and fast switching characteristics suitable for high-frequency applications.
This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ), with a total power dissipation of up to 230W at 25°C.
Applications include high-frequency computer motherboard DC-to-DC converters and OR-ing applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 100V.
The continuous drain current is 75A.
The maximum Rds On is 8.8mOhm at 25A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-220-3 package.