| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,600 pcs
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1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PSMN009-100B,118 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This component is designed for use in computing, communications, consumer, and industrial applications.
Key electrical characteristics include a maximum drain-source voltage of 100V and a maximum continuous drain current of 75A at 25°C with a gate-source voltage of 10V. The on-state resistance (RDSon) is a maximum of 8.8 mOhm at 25A and 25°C with a gate-source voltage of 10V. It also features a typical gate-drain charge of 44nC under specific test conditions.
The device is suitable for high frequency applications due to its fast switching characteristics and offers low conduction losses due to its low on-state resistance. Applications include high frequency computer motherboard DC-to-DC converters and OR-ing applications.
The PSMN009-100B,118 is housed in a D2PAK (SOT404) surface-mount plastic package. The mounting base is connected to the drain.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The maximum continuous drain current is 75A at 25°C with VGS = 10V.
The maximum on-state resistance is 8.8 mOhm at 25A and 25°C with VGS = 10V.
It is supplied in a D2PAK (SOT404) package.
This MOSFET is suitable for high frequency computer motherboard DC-to-DC converters and OR-ing applications.