| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel |
The NXP Semiconductors PSMN009-100B is an N-Channel MOSFET suitable for electronic designs requiring efficient switching. This component offers a drain-source breakdown voltage of 20V and a continuous drain current of 915mA at 25°C.
With a maximum on-resistance of 230mOhm at 600mA and 4.5V gate-source voltage, it provides good conduction characteristics. The gate threshold voltage is a maximum of 1.1V at 250µA, and it operates with drive voltages between 1.5V and 4.5V.
This MOSFET is housed in a surface-mount SC-75, SOT-416 package, making it suitable for compact PCB layouts. It operates within a wide temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the PSMN009-100B is 20V.
The continuous drain current (Id) at 25°C for the PSMN009-100B is 915mA.
The maximum on-resistance (Rds On) for the PSMN009-100B is 230mOhm when measured at 600mA drain current and 4.5V gate-source voltage.
The operating temperature range for the PSMN009-100B is -55°C to 150°C.
The PSMN009-100B is supplied in an SC-75, SOT-416 package and is designed for surface mounting.