| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PSMN005-55P,127 is an N-channel logic level TrenchMOS transistor from NXP Semiconductors, designed for high-performance applications. It features a low on-state resistance with a maximum of 5.8 mΩ at 25A and 10V Vgs.
Key electrical specifications include a drain-source voltage (Vdss) of 55V, a continuous drain current (Id) of 75A at 25°C, and a maximum power dissipation of 230W. The gate-source voltage (Vgs) is rated at ±15V, with a gate threshold voltage (Vgs(th)) of 2V at 1mA.
This MOSFET utilizes advanced Trench technology for optimal performance. It operates within a junction temperature range of -55°C to 175°C. The device is supplied in the SOT78 (TO220AB) conventional leaded package, suitable for through-hole mounting.
Applications for this transistor include d.c. to d.c. converters and switched-mode power supplies. Its low thermal resistance and fast switching capabilities make it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 55V.
The continuous drain current is 75A at 25°C with a Vgs of 5V.
The Rds(on) is a maximum of 5.8mOhm at 25A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 175°C.
The PSMN005-55P,127 is supplied in the SOT78 (TO220AB) package.
Applications include d.c. to d.c. converters and switched mode power supplies.