| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
226 pcs
|
226 pcs | On Request | 1 | On Request | On Request | 0801+ | On Request | On Request |
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| Technology |
The PSMN005-55P from NXP Semiconductors is an N-channel logic level TrenchMOS transistor. It is engineered for applications such as d.c. to d.c. converters and switched mode power supplies, leveraging advanced Trench technology for low on-state resistance.
Key electrical characteristics include a drain-source voltage (Vds) of 55V and a continuous drain current (Id) of up to 75A at 25°C. The on-state resistance (RDS(ON)) is specified at a maximum of 5.8 mΩ at VGS = 10V and 25A, and 6.3 mΩ at VGS = 5V and 25A. The device also offers a fast switching capability and low thermal resistance.
This MOSFET is supplied in the SOT78 (TO220AB) conventional leaded package, suitable for through-hole mounting. The operating junction and storage temperature range is from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the PSMN005-55P is 55V.
The continuous drain current (Id) is 75A at 25°C and 100°C with a gate-source voltage of 5V.
The on-state resistance (RDS(ON)) is a maximum of 5.8 mΩ at VGS = 10V and ID = 25A.
The PSMN005-55P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN005-55P is used in d.c. to d.c. converters and switched mode power supplies.