| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,640 pcs
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3640 pcs | On Request | 1 | On Request | On Request | 2013+ | On Request | On Request |
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The Renesas PS2561DL2-1Y-V-E3-A is a transistor output photocoupler designed for interface and signal transmission circuits. It combines a GaAs infrared LED with a silicon phototransistor.
Key electrical specifications include a maximum collector-emitter voltage of 80V and a maximum collector current of 50mA. The isolation voltage is rated at 5000Vrms, providing robust separation between input and output. Current transfer ratio (CTR) ranges from a minimum of 50% to a maximum of 400% at a typical forward current of 5mA.
This photocoupler operates efficiently with a typical switching speed rise time of 3µs and a fall time of 5µs. It is housed in a DIP package suitable for through-hole mounting and is specified for operation in ambient temperatures up to 110°C. The device is RoHS3 compliant and lead-free.
Designed with international safety standards in mind, the PS2561DL2-1Y-V-E3-A is suitable for various industrial and consumer electronics applications requiring reliable signal isolation.
DIP.
110°C (maximum ambient).
5000Vrms (nominal).
50% to 400%.
Rise time: 3µs typical, Fall time: 5µs typical.
80V maximum.
50mA maximum.