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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PRTR5V0U4Y-N is an ESD protection diode array from BORN Semiconductor, housed in a compact SOT-363 package. This solid-state silicon-avalanche device is engineered to safeguard input and output ports sensitive to capacitive loads, such as USB 2.0, Ethernet, and DVI interfaces, from electrostatic discharge.
Key electrical characteristics include a 60 Watts peak pulse power rating (tp = 8/20μs) and a 3.5A peak pulse current capability. It features a low clamping voltage, low leakage current, and low junction capacitance (Cj=0.25pF typical). The device provides protection against IEC 61000-4-2 ESD events up to ±15kV contact and ±20kV air discharge. It also withstands IEC 61000-4-4 EFT surges of 40A and IEC 61000-4-5 lightning surges of 3.5A.
Mechanical data indicates the SOT-363 package is made with UL 94V-0 rated molding compound. The device is supplied on tape and reel and is RoHS/WEEE compliant. Its applications include protecting data and power lines in notebooks, PCs, Ethernet, and DVI interfaces.
The PRTR5V0U4Y-N has a peak pulse power of 60 Watts for an 8/20μs waveform.
The peak pulse current rating for the PRTR5V0U4Y-N is 3.5 Amperes for an 8/20μs waveform.
The reverse standoff voltage (VRWM) for the PRTR5V0U4Y-N is 5.0 V.
The clamping voltage (VC) for the PRTR5V0U4Y-N is a maximum of 18V when subjected to a peak pulse current (IPP) of 3.5A with an 8/20μs waveform.
The junction capacitance (Cj) for the PRTR5V0U4Y-N is typically 0.25pF for IO to IO and 0.35pF for IO to GND at VR=0V and f=1MHz.
The PRTR5V0U4Y-N meets IEC 61000-4-2 ESD protection levels of ±15kV contact discharge and ±20kV air discharge.
The PRTR5V0U4Y-N is supplied in a SOT-363 package.