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PNMT6N1 The PNMT6N1 is an N-channel MOSFET from Shanghai Prisemi Elec. It offers a 40V Drain-Source Voltage and 180mA Continuous Drain Current.
Mfr Part #:

PNMT6N1

Available from 2 distributors
Mfr Name: Prisemi
Prisemi
The PNMT6N1 is an N-channel MOSFET from Shanghai Prisemi Elec. It offers a 40V Drain-Source Voltage and 180mA Continuous Drain Current.
✓ Total Stock: 10,960 pcs

PNMT6N1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,100 pcs
On Request
8100 pcs On Request 1 On Request On Request 2017+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,860 pcs
On Request
2860 pcs On Request 1 On Request On Request 1612+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PNMT6N1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Mounting Type
SVHC Present
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PNMT6N1 Description

Short technical summary and product information.

The PNMT6N1 is an N-channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage of 40V and a continuous Drain Current of 180mA. The device exhibits a low Gate Threshold Voltage ranging from 0.5V to 1.5V and a low Static Drain-Source On-Resistance of 4Ω at a VGS of 4.5V and ID of 0.2A.

 

This MOSFET is constructed in a compact UDFN-6(2x2) package, suitable for surface mounting. Its electrical characteristics include a maximum power dissipation of 150mW at 25°C ambient temperature. The device is also Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

 

Key electrical parameters include a Collector-Emitter Breakdown Voltage of -30V and a Collector Current of up to -3A. The PNMT6N1 is composed of a transistor and a MOSFET, offering features like very low collector-to-emitter saturation voltage and DC current gain greater than 100.

PNMT6N1 Quick Information

Product Type: MOSFET
Series: PNMT6N1
Canonical Name: PNMT6N1 N-channel MOSFET
Subcategory: N-Channel

PNMT6N1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PNMT6N1 Features

  • 40V drain-source voltage rating.
  • 180mA continuous drain current capability.
  • 150mW total power dissipation.
  • UDFN-6 surface mount package.
  • Pb-free, halogen free, and BFR free.

PNMT6N1 Applications

  • Suitable for low-power switching circuits.
  • Ideal for portable and battery-powered devices.
  • Used in signal amplification stages.
  • Applicable in load switch designs.

PNMT6N1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the PNMT6N1?

The maximum Drain-Source Voltage for the PNMT6N1 is 40V.

What is the continuous Drain Current of the PNMT6N1?

The continuous Drain Current (Id) for the PNMT6N1 is 180mA.

What is the package type for the PNMT6N1?

The PNMT6N1 is available in a UDFN-6(2x2) package.

What is the Gate Threshold Voltage range for the PNMT6N1?

The Gate Threshold Voltage (VGS(th)) for the PNMT6N1 ranges from 0.5V to 1.5V.

What is the RoHS status of the PNMT6N1?

The PNMT6N1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the PNMT6N1?

The Moisture Sensitivity Level (MSL) for the PNMT6N1 is 1 Unlimited.

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