| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,012 pcs
|
1012 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade |
The PRISEMI PNM523T201E0 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 9.5A. The gate-source voltage (Vgs) is rated at 10V.
This MOSFET exhibits a low on-resistance (Rds(on)) of 10mΩ at 10V Vgs and 12.2mΩ at 4.5V Vgs, ensuring efficient power handling. The gate threshold voltage (Vgs(th)) ranges from a minimum of 0.5V to a maximum of 1.1V.
The PNM523T201E0 is supplied in a compact SOT-23-3 package, suitable for surface mount assembly. Its specifications make it appropriate for use in portable and wearable devices, as well as in networking, security monitoring, and industrial control systems.
This component is manufactured by PRISEMI, a provider of power semiconductor devices.
20V.
9.5A.
10mΩ typical at 10V gate drive and 12.2mΩ typical at 4.5V gate drive.
From 0.5V minimum to 1.1V maximum.
SOT-23-3.
Surface Mount.
±10V.