PN4355 The PN4355 is a PNP bipolar transistor from On Semiconductor designed for general purpose amplification and switching. It features a 60V breakdown voltage and 800mA continuous collector current.
Mfr Part #:

PN4355

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The PN4355 is a PNP bipolar transistor from On Semiconductor designed for general purpose amplification and switching. It features a 60V breakdown voltage and 800mA continuous collector current.
Total Stock: 5,923 pcs
$ Price Range: $0.48

PN4355 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,923 pcs
5923 pcs On Request 1 On Request On Request 2002 On Request On Request

PN4355 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Emitter On Voltage (@ IC = 1.0 A, VCE = 1.0 V)
Base Emitter On Voltage (@ IC = 500 mA, VCE = 0.5 V)
Base Emitter Saturation Voltage (@ IC = 1.0 A, IB = 100 mA)
Base Emitter Saturation Voltage (@ IC = 150 mA, IB = 15 mA)
Base Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)
Collector Current - Continuous
Collector Cutoff Current
Collector Emitter Saturation Voltage (@ IC = -500 mA, IB = -50 mA)
Collector Emitter Saturation Voltage (@ IC = 1.0 A, IB = 100 mA)
Collector Emitter Saturation Voltage (@ IC = 150 mA, IB = 15 mA)
Collector Emitter Saturation Voltage (Unspecified condition)
Collector-Base Breakdown Voltage
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Current
DC Collector/Base Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC = 1.0 mA, VCE = 10 V)
DC Current Gain (hFE) (Minimum @ IC = 100 µA, VCE = 10 V)
DC Current Gain (hFE) (Minimum @ IC=500 mA, VCE=10 V)
DC Current Gain (hFE) (Minimum @ Ic=100 mA, Vce=10 V)
Emitter Cutoff Current (@ V EB = 5.0 V, VCE = 0)
Emitter Cutoff Current (@ VEB = 4.0 V, IC = 0)
Emitter-Base Breakdown Voltage
Emitter-Base Voltage
Gain-Bandwidth Product
Input Capacitance
Lead Style
Mounting Type
Noise Figure (Minimum/Maximum @ IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ , f = 1.0 kHz, BW = 1.0 Hz)
Operating Temperature
Output Capacitance
Power
Power Dissipation (Maximum) @ TA=25°C
Small Signal Current Gain (Minimum/Maximum @ IC = 50 mA, VCE = 10 V, f = 100 MHz)
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Ambient (@ Device mounted on FR -4 PCB 1.6" X 1.6" X 0.06.")
Transistor Type
Turn Off Time
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage
dc_current_gain_hFE (Minimum @ IC = 10 mA, VCE = 10 V)

PN4355 Description

Short technical summary and product information.

The PN4355 is a PNP bipolar transistor manufactured by On Semiconductor, suitable for general purpose amplifier and switch applications. It offers a collector-emitter voltage of 60V and a continuous collector current of 800mA.

 

Key electrical characteristics include a maximum power dissipation of 625mW at 25°C and a DC current gain (hFE) of at least 100 at 10mA and 10V. The transistor exhibits a collector-emitter saturation voltage of 0.50V at 500mA collector current and 50mA base current.

 

Packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, the PN4355 operates within a junction temperature range of -55°C to 150°C. Its thermal resistance from junction to ambient is 200°C/W when mounted on a standard FR-4 PCB.

 

This component is designed for applications requiring collector currents up to 500mA. Its specifications make it a versatile choice for various amplification and switching circuits.

PN4355 Quick Information

Product Type: PNP Transistor
Canonical Name: PN4355 PNP General Purpose Amplifier Transistor
Subcategory: PNP

PN4355 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PN4355 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PN4355 Features

  • PNP bipolar transistor for amplification.
  • 60V collector-emitter voltage rating.
  • 800mA continuous collector current.
  • 625mW maximum power dissipation.
  • TO-92-3 through-hole package.

PN4355 Applications

  • Suitable for general purpose amplification tasks.
  • Used in switching applications requiring up to 60V.
  • Ideal for low-power electronic switching circuits.
  • Applicable in signal amplification in consumer electronics.
  • Employed in various electronic circuit designs.

PN4355 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PN4355 transistor?

The collector-emitter voltage (VCEO) of the PN4355 transistor is 60V.

What is the continuous collector current for the PN4355?

The continuous collector current for the PN4355 is 800mA.

What is the power dissipation of the PN4355 transistor?

The total device dissipation for the PN4355 is 625mW at 25°C.

What is the operating temperature range for the PN4355?

The operating and storage junction temperature range for the PN4355 is -55°C to 150°C.

What package type is the PN4355 transistor supplied in?

The PN4355 transistor is supplied in a TO-92-3 package.

What is the DC current gain (hFE) of the PN4355 at 10mA and 10V?

The minimum DC current gain (hFE) of the PN4355 at 10mA and 10V is 100.

What is the collector-emitter saturation voltage of the PN4355 at 500mA and 50mA?

The collector-emitter saturation voltage (VCE(sat)) of the PN4355 at 500mA and 50mA is 0.50V.

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