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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,923 pcs
|
5923 pcs | On Request | 1 | On Request | On Request | 2002 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter On Voltage (@ IC = 1.0 A, VCE = 1.0 V) | |
| Base Emitter On Voltage (@ IC = 500 mA, VCE = 0.5 V) | |
| Base Emitter Saturation Voltage (@ IC = 1.0 A, IB = 100 mA) | |
| Base Emitter Saturation Voltage (@ IC = 150 mA, IB = 15 mA) | |
| Base Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | |
| Collector Current - Continuous | |
| Collector Cutoff Current | |
| Collector Emitter Saturation Voltage (@ IC = -500 mA, IB = -50 mA) | |
| Collector Emitter Saturation Voltage (@ IC = 1.0 A, IB = 100 mA) | |
| Collector Emitter Saturation Voltage (@ IC = 150 mA, IB = 15 mA) | |
| Collector Emitter Saturation Voltage (Unspecified condition) | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Collector/Base Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC = 1.0 mA, VCE = 10 V) | |
| DC Current Gain (hFE) (Minimum @ IC = 100 µA, VCE = 10 V) | |
| DC Current Gain (hFE) (Minimum @ IC=500 mA, VCE=10 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=100 mA, Vce=10 V) | |
| Emitter Cutoff Current (@ V EB = 5.0 V, VCE = 0) | |
| Emitter Cutoff Current (@ VEB = 4.0 V, IC = 0) | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Gain-Bandwidth Product | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (Minimum/Maximum @ IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ , f = 1.0 kHz, BW = 1.0 Hz) | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Small Signal Current Gain (Minimum/Maximum @ IC = 50 mA, VCE = 10 V, f = 100 MHz) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (@ Device mounted on FR -4 PCB 1.6" X 1.6" X 0.06.") | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| dc_current_gain_hFE (Minimum @ IC = 10 mA, VCE = 10 V) |
The PN4355 is a PNP bipolar transistor manufactured by On Semiconductor, suitable for general purpose amplifier and switch applications. It offers a collector-emitter voltage of 60V and a continuous collector current of 800mA.
Key electrical characteristics include a maximum power dissipation of 625mW at 25°C and a DC current gain (hFE) of at least 100 at 10mA and 10V. The transistor exhibits a collector-emitter saturation voltage of 0.50V at 500mA collector current and 50mA base current.
Packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, the PN4355 operates within a junction temperature range of -55°C to 150°C. Its thermal resistance from junction to ambient is 200°C/W when mounted on a standard FR-4 PCB.
This component is designed for applications requiring collector currents up to 500mA. Its specifications make it a versatile choice for various amplification and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) of the PN4355 transistor is 60V.
The continuous collector current for the PN4355 is 800mA.
The total device dissipation for the PN4355 is 625mW at 25°C.
The operating and storage junction temperature range for the PN4355 is -55°C to 150°C.
The PN4355 transistor is supplied in a TO-92-3 package.
The minimum DC current gain (hFE) of the PN4355 at 10mA and 10V is 100.
The collector-emitter saturation voltage (VCE(sat)) of the PN4355 at 500mA and 50mA is 0.50V.