| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,923 pcs
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5923 pcs | On Request | 1 | On Request | On Request | 2002 | On Request | On Request |
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The PN4355 is a PNP bipolar transistor manufactured by On Semiconductor, suitable for general purpose amplifier and switch applications. It offers a collector-emitter voltage of 60V and a continuous collector current of 800mA.
Key electrical characteristics include a maximum power dissipation of 625mW at 25°C and a DC current gain (hFE) of at least 100 at 10mA and 10V. The transistor exhibits a collector-emitter saturation voltage of 0.50V at 500mA collector current and 50mA base current.
Packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, the PN4355 operates within a junction temperature range of -55°C to 150°C. Its thermal resistance from junction to ambient is 200°C/W when mounted on a standard FR-4 PCB.
This component is designed for applications requiring collector currents up to 500mA. Its specifications make it a versatile choice for various amplification and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) of the PN4355 transistor is 60V.
The continuous collector current for the PN4355 is 800mA.
The total device dissipation for the PN4355 is 625mW at 25°C.
The operating and storage junction temperature range for the PN4355 is -55°C to 150°C.
The PN4355 transistor is supplied in a TO-92-3 package.
The minimum DC current gain (hFE) of the PN4355 at 10mA and 10V is 100.
The collector-emitter saturation voltage (VCE(sat)) of the PN4355 at 500mA and 50mA is 0.50V.