PDTC144ET-QR
Nexperia USA Inc.
The PDTC144ET-QR is an RF Diode from Nexperia USA Inc. It features RoHS3 compliance and an MSL 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,348 pcs
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9348 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
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| Tape & Reel |
The Texas Instruments PN4250 is a PNP bipolar transistor designed for general purpose amplification and switching applications. It offers a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of up to 500mA.
This device is suitable for applications requiring collector currents up to 300 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 250 to 700 at 5.0V VCE and 100μA IC, and a collector-emitter saturation voltage (VCE(sat)) of 0.25V maximum at 10mA IC and 0.5mA IB.
The PN4250 comes in a TO-92 package, suitable for through-hole mounting. It operates within a junction temperature range of -55 to +150°C. Thermal characteristics include a junction-to-ambient thermal resistance of 200°C/W.
This transistor is designed for use in various electronic circuits where reliable amplification and switching are needed. Its specifications make it a versatile component for designers.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the PN4250 is 40V.
The continuous Collector Current (IC) rating for the PN4250 is 500mA.
The operating and storage junction temperature range for the PN4250 is -55 to +150°C.
The DC Current Gain (hFE) of the PN4250 is between 250 and 700 when measured at 5.0V VCE and 100μA IC.
The PN4250 transistor is supplied in a TO-92 package.
