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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,154 pcs
|
9154 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Admittance Output (@ f = 1.0 kHz) | |
| Admittance Output (Maximum @ f = 1.0 kHz) | |
| Breakdown Voltage (Minimum @ IC = 10 µA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 μA, IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 5.0 mA, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Collector Current - Continuous | |
| Current | |
| Current Gain Hfe (Minimum/Maximum @ VCE = 5.0 V, IC = 100 µA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Impedance Input (@ VCE = 5.0 V, IC = 1.0 mA, f = 1.0 kHz) | |
| Impedance Input (Maximum @ VCE = 5.0 V, IC = 1.0 mA, f = 1.0 kHz) | |
| Leakage Current (Maximum @ VCB = 40 V, IE = 0) | |
| Leakage Current (Maximum @ VEB= 3.0 V, IC = 0) | |
| Mounting Type | |
| Noise Figure (@ VCE = 5.0 V, IC = 20 μA, RS = 10 kΩ, f = 1.0 kHz, BW = 150 Hz) | |
| Noise Figure (@ VCE = 5.0 V, IC = 250 μA, RS = 1.0 kΩ, f = 1.0 kHz, BW = 150 Hz) | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Output Capacitance | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Feedback Ratio | |
| Voltage Saturation Vce (Maximum @ IC = 10 mA, IB = 0.5 mA) |
The PN4250 from ON Semiconductor is a PNP general purpose bipolar junction transistor (BJT) suitable for amplification and switching tasks. It is rated for a collector-emitter voltage of up to 40V and can handle a continuous collector current of 500mA.
This device operates within a junction temperature range of -55°C to 150°C and has a total power dissipation of 625mW at 25°C, with a derating of 5.0mW/°C above that temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 250 at 100µA and 5V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 0.25V at 10mA collector current and 0.5mA base current.
Packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, the PN4250 is designed for ease of mounting on printed circuit boards. Its thermal resistance from junction to ambient is 200°C/W, and from junction to case is 83.3°C/W.
With its robust specifications, the PN4250 is a reliable choice for various electronic circuits requiring general-purpose amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C
40V
500mA
TO-92-3
250
0.25V