| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor PN4117A is an N-Channel Junction Field-Effect Transistor (JFET) designed for low current DC and audio applications. It offers excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources.
Key electrical characteristics include a drain-gate voltage of 40V and a gate-source voltage of -40V. The device exhibits a zero-gate voltage drain current (IDSS) between 30µA and 90µA at 10V drain-source voltage. Its common source forward transconductance (gfs) ranges from 70 to 210 mmhos at 1.0 KHz.
With a total device dissipation of 350mW, the PN4117A is suitable for various applications. It operates within a temperature range of -55°C to 150°C. The JFET is housed in a TO-92-3 package, suitable for through-hole mounting.
This device is sourced from process 53 and is designed for reliability and performance in high impedance circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate voltage for the PN4117A is 40V.
The gate-source voltage rating for the PN4117A is -40V.
The operating and storage temperature range for the PN4117A is -55°C to 150°C.
The zero-gate voltage drain current (IDSS) for the PN4117A is between 30µA and 90µA at 10V.
The common source forward transconductance (gfs) of the PN4117A is between 70 and 210 mmhos at 1.0 KHz.
The total device dissipation for the PN4117A is 350mW.
The PN4117A is available in a TO-92-3 package.