| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor PN2907ABU is a versatile PNP bipolar junction transistor (BJT) suitable for a wide range of electronic circuits. It offers a maximum collector-emitter voltage of 60V and a continuous collector current of up to 800mA, making it capable of handling moderate power applications.
This transistor operates within a junction temperature range of -55°C to +150°C, ensuring reliable performance across various environmental conditions. Its transition frequency of 200MHz allows for high-speed operation in switching and amplification tasks. The PN2907ABU is supplied in a standard TO-92-3 through-hole package, which is easy to mount on printed circuit boards.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a low collector cutoff current of 20nA. The Vce(sat) is 1.6V at 50mA/500mA, indicating efficient saturation characteristics for switching applications.
Applications for the PN2907ABU include general-purpose signal amplification in analog and digital circuits, low- to medium-power switching, and use in consumer electronics, industrial controls, instrumentation, and audio equipment. Its compact size and through-hole mounting make it suitable for both manual and automated PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the PN2907ABU is 60V.
The PN2907ABU can handle a maximum continuous collector current (Ic) of 800mA.
The operating junction temperature range for the PN2907ABU is -55°C to +150°C.
The PN2907ABU is supplied in a TO-92-3 package.
The transition frequency (Ft) of the PN2907ABU is 200MHz.
The minimum DC current gain (hFE) for the PN2907ABU is 100 at 150mA and 10V.