| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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The ON Semiconductor PN2222ATFR is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is designed for through-hole mounting and offers a collector-emitter voltage (VCEO) of up to 40V and a continuous collector current of 1A.
Key electrical characteristics include a maximum power dissipation of 625 mW, a DC current gain (hFE) minimum of 100 at 150mA and 10V, and a gain bandwidth product (fT) of 300MHz. The transistor operates within a temperature range of -55°C to 150°C.
With its robust specifications, the PN2222ATFR is suitable for various switching and amplification applications in electronic circuits. Its TO-92-3 package and through-hole mounting make it convenient for breadboarding and through-hole PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PN2222ATFR is 40V.
The PN2222ATFR can handle a continuous collector current of 1A.
The operating temperature range is from -55°C to 150°C.
The PN2222ATFR is supplied in a TO-92-3 package.
The PN2222ATFR is designed for through-hole mounting.
The minimum DC current gain (hFE) is 100 at 150mA and 10V.
The gain bandwidth product (fT) is 300MHz.