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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PN2222A from ON Semiconductor is a versatile NPN bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications. It is rated for a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of up to 1A, making it capable of handling medium power requirements.
This transistor features a DC current gain (hFE) ranging from 35 to 300 depending on the operating conditions. Its small signal characteristics include a current gain bandwidth product (fT) of 300MHz at 20mA and 20V. The device is housed in a standard TO-92 package, designed for through-hole mounting.
Key electrical parameters include a collector-emitter saturation voltage (VCE(sat)) of 0.3V at 150mA and 500mA at 50mA, and a base-emitter saturation voltage (VBE(sat)) of 1.2V at 150mA and 2V at 500mA. The operating and storage junction temperature range is from -55°C to 150°C.
With its robust specifications and common packaging, the PN2222A is a reliable choice for various electronic designs requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PN2222A is 40V.
The continuous collector current (IC) rating for the PN2222A is 1A.
The PN2222A transistor is supplied in a TO-92 package.
The operating and storage junction temperature range for the PN2222A is -55°C to 150°C.
The current gain bandwidth product (fT) for the PN2222A is 300MHz at 20mA and 20V.