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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
264,373 pcs
|
264373 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current - Collector (Ic) (Max) | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power - Max | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage - Collector Emitter Breakdown (Max) |
The PN100TF is a single NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This power transistor is designed for various electronic applications requiring reliable switching and amplification.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 60V and a continuous collector current rating of up to 3A. It offers a minimum DC current gain (hFE) of 100 at 600mA and 2V. The transistor has a maximum power dissipation of 1.3W and a Vce saturation voltage of 250mV at 1.5A collector current.
Packaged in a through-hole TO-126 configuration, the PN100TF is suitable for applications where through-hole mounting is preferred. Its robust construction and specified parameters make it a suitable component for power supply circuits, audio amplifiers, and general-purpose switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the PN100TF is 3 A.
The collector-emitter breakdown voltage (Vce) for the PN100TF is 60 V.
The maximum power dissipation for the PN100TF is 1.3 W.
The PN100TF transistor is supplied in a TO-126 package.
The PN100TF transistor is mounted using the through-hole method.