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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor PN100A is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a maximum collector-emitter voltage of 45V and can handle a continuous collector current of up to 500mA. The transistor exhibits a DC current gain (hFE) of 300 at 10mA and 1V, with a Vce saturation of 400mV at 20mA and 200mA.
With a power dissipation of 625mW and a transition frequency of 250MHz, the PN100A is designed for through-hole mounting in a standard TO-92-3 package. It operates across a wide temperature range from -55°C to 150°C (TJ). This component is RoHS3 compliant.
This NPN transistor is a reliable choice for switching and amplification circuits where moderate voltage and current handling are required. Its through-hole package facilitates easy integration into breadboard or PCB designs.
| Qty | Low | High |
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| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the PN100A is 45V.
The PN100A has a continuous collector current rating of 500mA.
The DC current gain (hFE) of the PN100A is a minimum of 300 at 10mA and 1V.
The operating temperature range for the PN100A is -55°C to 150°C (TJ).
The PN100A is supplied in a TO-92-3 package.