| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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261 pcs
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261 pcs | On Request | 1 | On Request | On Request | 2242 | On Request | On Request |
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The NXP Semiconductors PMV48XPAR is a P-Channel MOSFET belonging to the single FET category. It is designed to handle a drain-source voltage (Vds) of up to 20V and can sustain a continuous drain current (Id) of 3.5A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 55 mΩ when subjected to a gate-source voltage (Vgs) of 4.5V and a drain current of 2.4A. Its typical gate threshold voltage (Vgs(th)) is 1.25V at 250µA, and the typical gate charge (Qg) is 11nC at 4.5V. The input capacitance (Ciss) is typically 1000pF at 10V. The maximum power dissipation (Pd) for this component is 510mW. The PMV48XPAR is supplied in a TO-236-3, SC-59, or SOT-23-3 package, with a standard package of TO-236AB or SOT23. This MOSFET is suitable for applications requiring efficient switching and power control within its specified electrical and thermal limits.
The drain-source voltage (Vds) is 20V.
The continuous drain current (Id) is 3.5A at 25°C.
The typical on-resistance (Rds(on)) is 55 mΩ at 2.4A and 4.5V.
The PMV48XPAR is available in TO-236-3, SC-59, and SOT-23-3 packages.
The typical gate threshold voltage (Vgs(th)) is 1.25V at 250µA.
The typical gate charge (Qg) is 11nC at 4.5V.
The typical input capacitance (Ciss) is 1000pF at 10V.