PMV40UN2R The NXP Semiconductors PMV40UN2R is an N-channel Trench MOSFET in a SOT-23 package. It offers a 30V drain-source voltage and a maximum continuous drain current of 4.4A.
Mfr Part #:

PMV40UN2R

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PMV40UN2R is an N-channel Trench MOSFET in a SOT-23 package. It offers a 30V drain-source voltage and a maximum continuous drain current of 4.4A.
Total Stock: 13,379 pcs
$ Price Range: $0.48

PMV40UN2R Available from 4 distributors

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Non-Authorised

PMV40UN2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Drain-source voltage
Forward Voltage
Gate Charge
Gate-Source Voltage
ID (Maximum @ VGS = -4.5 V; Tamb = 25 °C)
ID (Maximum @ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s)
Id (Maximum @ VGS=4.5 V, Tamb=100 °C)
Junction Temperature
Lead Spacing
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Type
Peak Drain Current
Pin Count
RDS(on) (Maximum)
Rds(on) (Maximum @ VGS = 4.5 V; ID = 3.7 A; Tj = 25 °C)
Storage Temperature
Total Power Dissipation

PMV40UN2R Description

Short technical summary and product information.

The NXP Semiconductors PMV40UN2R is an N-channel enhancement mode Trench MOSFET designed for various applications including LED drivers, power management, and switching circuits. It features a small SOT-23 (TO-236AB) surface-mounted plastic package.

 

Key electrical characteristics include a maximum drain-source voltage of 30V and a maximum continuous drain current of 4.4A at 25°C ambient temperature. The drain-source on-state resistance is specified at a maximum of 44mΩ under typical test conditions (VGS = 4.5V, ID = 3.7A, Tj = 25°C). The device also has a low threshold voltage and very fast switching capabilities.

 

With an enhanced power dissipation capability of 1000 mW, this MOSFET is suitable for applications requiring efficient power handling. The operating temperature range is from -55°C to 150°C, making it robust for various environmental conditions. The SOT-23 package is ideal for surface-mount designs where space is a constraint.

 

This MOSFET utilizes Trench MOSFET technology, offering benefits such as low threshold voltage and enhanced power dissipation. Its applications span across power management, LED drivers, and general switching circuits, making it a versatile component for electronic designs.

PMV40UN2R Quick Information

Product Type: MOSFET
Series: PMV40UN2
Canonical Name: N-Channel Trench MOSFET PMV40UN2R
Subcategory: N-Channel

PMV40UN2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMV40UN2R Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMV40UN2R Features

  • N-channel Trench MOSFET technology.
  • 30V maximum drain-source voltage.
  • 4.4A maximum continuous drain current.
  • Low drain-source on-state resistance.
  • SOT-23 surface-mount package.

PMV40UN2R Applications

  • Suitable for LED drivers.
  • Used in power management circuits.
  • Ideal for low-side load switches.
  • Applicable in general switching circuits.

PMV40UN2R FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMV40UN2R?

The maximum drain-source voltage is 30V.

What is the maximum continuous drain current for the PMV40UN2R?

The maximum continuous drain current is 4.4A.

What is the package type for the PMV40UN2R?

The package type is TO-236AB, SOT-23.

What is the drain-source on-state resistance of the PMV40UN2R?

The drain-source on-state resistance is a maximum of 44mΩ.

What is the operating temperature range for the PMV40UN2R?

The operating temperature range is -55°C to 150°C.

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