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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
680 pcs
|
680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
660 pcs
|
660 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Drain-source voltage | |
| Forward Voltage | |
| Gate Charge | |
| Gate-Source Voltage | |
| ID (Maximum @ VGS = -4.5 V; Tamb = 25 °C) | |
| ID (Maximum @ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s) | |
| Id (Maximum @ VGS=4.5 V, Tamb=100 °C) | |
| Junction Temperature | |
| Lead Spacing | |
| Maximum Operating Temperature | |
| Minimum Operating Temperature | |
| Mounting Type | |
| Peak Drain Current | |
| Pin Count | |
| RDS(on) (Maximum) | |
| Rds(on) (Maximum @ VGS = 4.5 V; ID = 3.7 A; Tj = 25 °C) | |
| Storage Temperature | |
| Total Power Dissipation |
The NXP Semiconductors PMV40UN2R is an N-channel enhancement mode Trench MOSFET designed for various applications including LED drivers, power management, and switching circuits. It features a small SOT-23 (TO-236AB) surface-mounted plastic package.
Key electrical characteristics include a maximum drain-source voltage of 30V and a maximum continuous drain current of 4.4A at 25°C ambient temperature. The drain-source on-state resistance is specified at a maximum of 44mΩ under typical test conditions (VGS = 4.5V, ID = 3.7A, Tj = 25°C). The device also has a low threshold voltage and very fast switching capabilities.
With an enhanced power dissipation capability of 1000 mW, this MOSFET is suitable for applications requiring efficient power handling. The operating temperature range is from -55°C to 150°C, making it robust for various environmental conditions. The SOT-23 package is ideal for surface-mount designs where space is a constraint.
This MOSFET utilizes Trench MOSFET technology, offering benefits such as low threshold voltage and enhanced power dissipation. Its applications span across power management, LED drivers, and general switching circuits, making it a versatile component for electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 4.4A.
The package type is TO-236AB, SOT-23.
The drain-source on-state resistance is a maximum of 44mΩ.
The operating temperature range is -55°C to 150°C.