| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The NXP Semiconductors PMV37EN is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 3.1A at 25°C ambient temperature with a gate-source voltage of 10V. The drain-source on-state resistance is a maximum of 36 mΩ under the same conditions. The device also features a peak drain current of 12.4A for single pulses up to 10µs.
This MOSFET is designed for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. Its logic-level compatibility and very fast switching capabilities make it suitable for various electronic designs.
The operating temperature range is from -55°C to 150°C for both junction and ambient temperatures, with a storage temperature range of -65°C to 150°C. The component is supplied in a SOT23 package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the PMV37EN is 30V.
The continuous drain current of the PMV37EN is 3.1A at 25°C ambient temperature with VGS = 10V.
The maximum drain-source on-state resistance for the PMV37EN is 36 mΩ.
The PMV37EN is supplied in a SOT23 package.
Key features include N-channel enhancement mode Trench MOSFET technology, 30V drain-source voltage, 3.1A continuous drain current, low on-resistance, and a SOT23 surface-mount package.
Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.