| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,505 pcs
|
1505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NXP Semiconductors PMV130ENEAR is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It comes in a compact SOT23 (TO-236AB) surface-mounted device package.
This MOSFET features a drain-source voltage of 40V and a continuous drain current of 2.1A at 25°C ambient temperature. The on-state resistance (RdsOn) is a maximum of 120mOhm at 1.5A and 10V gate-source voltage. It is logic-level compatible and offers an extended junction temperature range up to 175°C.
Key electrical characteristics include an input capacitance of 170pF at 20V and a gate charge of 3.6nC at 10V. The device also provides ElectroStatic Discharge (ESD) protection exceeding 1kV HBM.
Applications for the PMV130ENEAR include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. It is AEC-Q101 qualified, indicating suitability for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 40V.
The maximum RdsOn is 120mOhm at 1.5A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
The PMV130ENEAR is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, the PMV130ENEAR is AEC-Q101 qualified.