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PMR280UN The NXP Semiconductors PMR280UN is an N-channel enhancement mode FET utilizing TrenchMOS technology. It features a low on-state resistance and is housed in an ultra-small SOT416 package.
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PMR280UN

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PMR280UN is an N-channel enhancement mode FET utilizing TrenchMOS technology. It features a low on-state resistance and is housed in an ultra-small SOT416 package.
✓ Total Stock: 2,423 pcs

PMR280UN Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,423 pcs
On Request
2423 pcs On Request 1 On Request On Request 09+ On Request On Request
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PMR280UN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PMR280UN Description

Short technical summary and product information.

The PMR280UN from NXP Semiconductors is an N-channel enhancement mode Field-Effect Transistor (FET) designed with TrenchMOS technology. This FET is characterized by its ultra-small Surface-Mounted Device (SMD) plastic package, specifically the SOT416 (SC-75) type, offering a footprint 63% smaller than the SOT23.

 

Key electrical specifications include a drain-source voltage (VDS) of up to 20V and a continuous drain current (ID) of 0.98A at 25°C with a gate-source voltage (VGS) of 4.5V. The on-state resistance (RDSon) is a low 280 mΩ typical at 0.2A and 25°C. The device also features a low threshold voltage.

 

Applications for the PMR280UN include driver circuits and switching in portable appliances. Its compact size and low on-state resistance make it suitable for space-constrained designs requiring efficient switching performance.

PMR280UN Quick Information

Product Type: FET
Series: ultra low level FET
Canonical Name: N-channel enhancement mode Field-Effect Transistor (FET)
Subcategory: N-channel

PMR280UN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMR280UN Features

  • N-channel enhancement mode FET
  • TrenchMOS technology for low RDSon
  • Ultra-small SOT416 package
  • Low threshold voltage
  • Suitable for portable appliances

PMR280UN Applications

  • Use in driver circuits for switching
  • Ideal for switching in portable appliances
  • Suitable for low-level signal switching
  • Used in battery-powered portable devices

PMR280UN FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PMR280UN?

The maximum drain-source voltage (VDS) is 20V.

What is the continuous drain current rating of the PMR280UN?

The continuous drain current (ID) is 0.98A at 25°C.

What is the on-state resistance of the PMR280UN?

The maximum drain-source on-state resistance (RDSon) is 340mOhm at VGS = 4.5V.

What package does the PMR280UN come in?

The PMR280UN is available in a SOT416 (SC-75) surface mount package.

What is the operating temperature range for the PMR280UN?

The junction temperature range is -55°C to 150°C.

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