PMN50UPE,115 This P-Channel MOSFET from NXP Semiconductors features a 20V drain-to-source voltage and a continuous drain current of 3.6A. It is designed for surface mounting.
Mfr Part #:

PMN50UPE,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
This P-Channel MOSFET from NXP Semiconductors features a 20V drain-to-source voltage and a continuous drain current of 3.6A. It is designed for surface mounting.
✓ Total Stock: 2,970 pcs
$ Price Range: $2.27

PMN50UPE,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,970 pcs
2970 pcs On Request 1 On Request On Request On Request On Request On Request

PMN50UPE,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMN50UPE,115 Description

Short technical summary and product information.

The NXP Semiconductors PMN50UPE,115 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 3.6A at ambient temperature. The on-resistance (Rds On) is specified as a maximum of 66mOhm at 3.6A drain current and 4.5V gate-source voltage.

 

This MOSFET has a maximum power dissipation of 510mW at ambient temperature and operates within a temperature range of -55°C to 150°C. It features a gate threshold voltage (Vgs(th)) of 900mV at 250µA and a maximum gate-to-source voltage (Vgs) of ±8V. The component is constructed using MOSFET (Metal Oxide) technology.

 

Packaged in a 6-TSOP configuration, the PMN50UPE,115 is suitable for surface mounting. Its specifications make it a viable option for switching and amplification circuits where P-channel enhancement mode operation is required.

PMN50UPE,115 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET PMN50UPE,115
Subcategory: MOSFET

PMN50UPE,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMN50UPE,115 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMN50UPE,115 Features

  • P-Channel MOSFET technology.
  • 20V drain-to-source voltage.
  • 3.6A continuous drain current.
  • 66mOhm maximum on-resistance.
  • Surface mountable 6-TSOP package.

PMN50UPE,115 Applications

  • Suitable for power switching.
  • Used in amplification circuits.
  • Enhancement mode operation.
  • General purpose discrete applications.

PMN50UPE,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the PMN50UPE,115?

The drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current of the PMN50UPE,115?

The continuous drain current (Id) is 3.6A.

What is the maximum on-resistance for the PMN50UPE,115?

The maximum on-resistance (Rds On) is 66mOhm at 3.6A drain current and 4.5V gate-source voltage.

What is the operating temperature range for the PMN50UPE,115?

The operating temperature range is -55°C to 150°C.

What package type is the PMN50UPE,115 supplied in?

The PMN50UPE,115 is supplied in a 6-TSOP package.

Is the PMN50UPE,115 RoHS compliant?

Yes, the PMN50UPE,115 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the PMN50UPE,115?

The Moisture Sensitivity Level (MSL) is 1.

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