| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
443 pcs
|
443 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The PMGD8000LN,115 is a MOSFET manufactured by NXP Semiconductors. It features a drain-source voltage of 30V and a maximum drain current of 125mA. The device is designed with a logic level gate feature and is available in a 6-TSSOP package suitable for surface mount applications. Its electrical characteristics include an Rds On (Max) of 8 Ohm at 10mA and 4V, a gate charge of 0.35nC at 4.5V, and a gate threshold voltage of 1.5V at 100µA. The device operates within a temperature range from -55°C to 150°C and dissipates up to 200mW of power. It is compliant with RoHS standards and has a Moisture Sensitivity Level of 1. The device is suitable for use in switching applications, power management, and other electronic circuits requiring low on-resistance and logic level operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
It comes in a 6-TSSOP package.
The maximum drain current is 125mA.
Yes, it is RoHS3 compliant.
-55°C to 150°C.