PMGD280UN,115 The NXP Semiconductors PMGD280UN,115 is a dual N-channel enhancement mode field-effect transistor. It offers a low on-state resistance and fast switching capabilities.
Mfr Part #:

PMGD280UN,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PMGD280UN,115 is a dual N-channel enhancement mode field-effect transistor. It offers a low on-state resistance and fast switching capabilities.
✓ Total Stock: 724 pcs
$ Price Range: $2.23

PMGD280UN,115 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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724 pcs
724 pcs On Request 1 On Request On Request 1048 On Request On Request

PMGD280UN,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PMGD280UN,115 Description

Short technical summary and product information.

The PMGD280UN,115 from NXP Semiconductors is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. This device is designed for surface mounting and features a footprint 40% smaller than the SOT23 package, making it suitable for space-constrained applications.

 

Key electrical characteristics include a drain-source voltage (VDS) of up to 20V and a continuous drain current (ID) of 0.87A at 25°C with VGS = 4.5V. The total power dissipation (Ptot) is rated at 0.4W at 25°C. It also boasts a low on-state resistance (RDSon) of 340mΩ and a low threshold voltage.

 

This FET is well-suited for driver circuits and switching applications in portable appliances. Its dual device configuration and fast switching performance enhance its utility in various electronic designs.

 

The component is housed in an SC-88 (SOT363) package, a plastic surface-mounted type with 6 leads. It operates within a wide temperature range, with storage and junction temperatures from -55°C to +150°C.

PMGD280UN,115 Quick Information

Product Type: Dual N-channel FET
Canonical Name: PMGD280UN,115 Dual N-channel μTrenchMOS™ ultra low level FET
Subcategory: Dual N-channel

PMGD280UN,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMGD280UN,115 Estimated Pricing

Qty Low High
1+ $2.23 $2.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMGD280UN,115 Features

  • Dual N-channel enhancement mode FET.
  • Surface mounted SC-88 package.
  • 20V drain-source voltage rating.
  • 0.87A maximum continuous drain current.
  • Low on-state resistance of 340mΩ.

PMGD280UN,115 Applications

  • Suitable for low-voltage switching applications.
  • Ideal for portable appliance driver circuits.
  • Used in compact power management designs.
  • Applicable in fast switching circuit designs.

PMGD280UN,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMGD280UN,115?

The maximum drain-source voltage is 20V.

What is the continuous drain current at 25°C?

The continuous drain current is 0.87A at 25°C with VGS = 4.5V.

What is the total power dissipation of the PMGD280UN,115?

The total power dissipation is 0.4W at 25°C.

What is the on-state resistance (RDSon)?

The on-state resistance is 340mΩ.

What type of package is the PMGD280UN,115 in?

It is in an SC-88 package, designed for surface mounting.

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