| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
724 pcs
|
724 pcs | On Request | 1 | On Request | On Request | 1048 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The PMGD280UN,115 from NXP Semiconductors is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. This device is designed for surface mounting and features a footprint 40% smaller than the SOT23 package, making it suitable for space-constrained applications.
Key electrical characteristics include a drain-source voltage (VDS) of up to 20V and a continuous drain current (ID) of 0.87A at 25°C with VGS = 4.5V. The total power dissipation (Ptot) is rated at 0.4W at 25°C. It also boasts a low on-state resistance (RDSon) of 340mΩ and a low threshold voltage.
This FET is well-suited for driver circuits and switching applications in portable appliances. Its dual device configuration and fast switching performance enhance its utility in various electronic designs.
The component is housed in an SC-88 (SOT363) package, a plastic surface-mounted type with 6 leads. It operates within a wide temperature range, with storage and junction temperatures from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 0.87A at 25°C with VGS = 4.5V.
The total power dissipation is 0.4W at 25°C.
The on-state resistance is 340mΩ.
It is in an SC-88 package, designed for surface mounting.