| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,707 pcs
|
9707 pcs | On Request | 1 | On Request | On Request | 1124+ | On Request | On Request |
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| Tape & Reel |
The PMF780SN from NXP Semiconductors is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. This component is housed in a compact SC-70 (SOT323) plastic surface-mounted package, offering a footprint 40% smaller than the SOT23.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 0.57A at 25°C. It exhibits a low on-state resistance (RDSon) of 920 mΩ and fast switching capabilities.
This FET is suitable for applications such as driver circuits and switching in portable appliances. Its thermal specifications include a maximum total power dissipation of 0.56W at 25°C and an operating junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the PMF780SN is 60V.
The continuous drain current (ID) at 25°C for the PMF780SN is 0.57A.
The maximum on-state resistance (RDSon) for the PMF780SN is 920 mΩ.
The PMF780SN is in an SC-70 (SOT323) plastic surface-mounted package.
The PMF780SN is suitable for driver circuits and switching in portable appliances.