PMF400UN,115 The Nexperia PMF400UN,115 is an N-channel MOSFET designed for driver circuits and switching in portable appliances. It features a 30V drain-source voltage and 830mA continuous drain current.
Mfr Part #:

PMF400UN,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The Nexperia PMF400UN,115 is an N-channel MOSFET designed for driver circuits and switching in portable appliances. It features a 30V drain-source voltage and 830mA continuous drain current.
✓ Total Stock: 176 pcs
$ Price Range: $2.27

PMF400UN,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
176 pcs
176 pcs On Request 1 On Request On Request 1030 On Request On Request

PMF400UN,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMF400UN,115 Description

Short technical summary and product information.

The Nexperia PMF400UN,115 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is housed in a compact SC-70 (SOT-323) surface-mount plastic package, offering a footprint 40% smaller than the SOT23.

 

This MOSFET is rated for a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 830mA at 25°C ambient temperature. It exhibits a low on-state resistance (RdsOn) of 480mOhm at 200mA and 4.5V gate-source voltage, along with a low threshold voltage (Vgs(th)) of 1V at 250µA.

 

Key electrical characteristics include an input capacitance (Ciss) of 43pF at 25V and a gate charge (Qg) of 0.89nC at 4.5V. The device operates within a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 560mW (Tc).

 

Applications for the PMF400UN,115 include driver circuits and switching applications in portable appliances. Its small package size and low on-state resistance make it suitable for space-constrained designs.

PMF400UN,115 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

PMF400UN,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMF400UN,115 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMF400UN,115 Features

  • N-channel MOSFET with TrenchMOS technology.
  • 30V drain-source voltage rating.
  • 830mA continuous drain current.
  • Low on-state resistance of 480mOhm.
  • Compact SC-70 (SOT-323) surface-mount package.

PMF400UN,115 Applications

  • Used in low-voltage switching circuits
  • Suitable for compact electronic devices
  • Ideal for power management applications
  • Applicable in automotive and industrial circuits

PMF400UN,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMF400UN,115 MOSFET?

The maximum drain-source voltage (Vds) for the PMF400UN,115 is 30V.

What is the continuous drain current of the PMF400UN,115?

The continuous drain current (Id) is 830mA at 25°C ambient temperature.

What is the on-state resistance (Rds On) for this MOSFET?

The Rds On is a maximum of 480mOhm when measured at 200mA and 4.5V gate-source voltage.

What is the operating temperature range for the PMF400UN,115?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the PMF400UN,115 MOSFET supplied in?

The PMF400UN,115 is supplied in an SC-70, SOT-323 package.

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