| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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655,020 pcs
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655020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PMEG2010EA115 is a planar Schottky barrier diode designed for ultra-high-speed switching applications. It features a maximum forward current of 1A and a reverse voltage rating of 20V. The diode exhibits a very low forward voltage, with a typical value of 480mV at 1A. It is encapsulated in a compact SOD323 (SC-76) surface-mount plastic package, making it suitable for space-constrained designs.
This Schottky diode is ideal for voltage clamping and protection circuits. Its ultra-high-speed switching capability ensures efficient performance in demanding applications. The integrated guard ring provides stress protection. The device operates within a junction temperature range of -65°C to 150°C and an ambient temperature range of -55°C to 150°C.
The PMEG2010EA115 is supplied in a SOD323 package, which is a very small SMD plastic package with 2 leads and a 1.3 mm pitch. The body dimensions are 1.7 mm x 1.25 mm x 0.95 mm. The marking code for this type number is E1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current is 1A.
The maximum reverse voltage is 20V.
The typical forward voltage at 1A is 480mV.
The PMEG2010EA115 is supplied in a SOD323 (SC-76) SMD plastic package.
Applications include ultra-high-speed switching, voltage clamping, and protection circuits.