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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMD9002D,115 is an NPN Resistor-Equipped Transistor (RET) suitable for MOSFET driver applications. This component integrates two transistors and a high-speed switching diode in a totem pole configuration, designed to minimize layout effort and reduce component count.
Key electrical characteristics include a collector-emitter voltage of 45V for Transistor 2 and a maximum collector current of 0.1A per transistor. The diode features a forward current of up to -0.2A and a forward voltage of -1.1V under specific test conditions. The device is housed in a compact SOT-457 (SC-74) surface-mounted plastic package.
This transistor is optimized for space-saving solutions and simplifies design implementation. Its application-optimized pinout and internal connections contribute to efficient circuit design. The Nexperia PMD9002D,115 is a general-purpose transistor and high-speed switching diode combination, ideal for driving MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for Transistor 2 is 45V when the base is open.
The maximum forward current for the diode (D1) is -200mA.
The PMD9002D,115 is supplied in a SOT-457 (SC-74) surface-mount plastic package.
The PMD9002D,115 is primarily used as a MOSFET driver.