| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The PMD16K80 is a Silicon Power Transistor manufactured by Inchange Semiconductor. This NPN transistor is housed in a TO-3 package, making it suitable for applications requiring robust power handling.
Key electrical specifications include a maximum collector emitter voltage of 80V and a maximum power dissipation of 200W. The operating temperature range spans from -65°C to 200°C, indicating its capability to function in demanding thermal environments.
This component is categorized under Transistors - Special Purpose, suggesting its use in specific circuit designs where standard bipolar transistors may not suffice. Its TO-3 packaging is characteristic of power transistors designed for through-hole mounting and efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the PMD16K80 is 80V.
The maximum power dissipation for the PMD16K80 is 200W.
The PMD16K80 operates between -65°C and 200°C.
The PMD16K80 is supplied in a TO-3 package.
The polarity of the PMD16K80 is NPN.