| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,075 pcs
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2075 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor PMBTA42 is a general-purpose NPN bipolar junction transistor (BJT) designed for various electronic applications. It offers a high collector-emitter breakdown voltage of 300V and can handle a maximum collector current of 100mA.
This transistor features a DC current gain (hFE) of at least 40 at 30mA and 10V. Its Vce saturation is specified at a maximum of 500mV under test conditions of 2mA base current and 20mA collector current. The transition frequency is 50MHz, making it suitable for moderate frequency applications.
The PMBTA42 is housed in a TO-236AB surface mount package, facilitating integration into compact PCB designs. Its power dissipation is rated at a maximum of 250mW.
This component is suitable for switching and amplification tasks in electronic circuits where its voltage and current ratings are appropriate. The surface mount package is ideal for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 300V.
The maximum collector current is 100mA.
The minimum DC current gain (hFE) is 40 at 30mA collector current and 10V collector-emitter voltage.
The PMBTA42 is supplied in a TO-236AB surface mount package.
The transition frequency is 50MHz.