| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,908 pcs
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2908 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PMBT2907A,215 is a PNP bipolar junction transistor (BJT) suitable for switching and linear amplification applications. It is housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a maximum collector-emitter voltage of 60V and a continuous collector current of 600mA. The DC current gain (hFE) ranges from 100 to 300 at a collector current of 150mA and VCE of -10V. The transistor also has a maximum power dissipation of 250mW at an ambient temperature of 25°C.
This AEC-Q101 qualified transistor operates within a junction temperature range of -65°C to 150°C. Its NPN complement is the PMBT2222A. The PMBT2907A,215 is mounted using a surface mount technique.
This device is suitable for various electronic circuits requiring a general-purpose switching transistor. Its small package size makes it ideal for space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -60 V.
The continuous collector current rating is -600 mA.
The DC current gain (hFE) is between 100 and 300 at 25°C.
The operating temperature range is -65°C to 150°C.
The PMBT2907A,215 is supplied in a TO-236AB (SOT23) package.
The PMBT2907A,215 is a surface mount device.