| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,343 pcs
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2343 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PMBT2222A,215 is an NPN switching transistor suitable for switching and linear amplification applications. It features a maximum collector-emitter voltage of 30V and a maximum collector current of 600mA.
This transistor is AEC-Q101 qualified, indicating its suitability for automotive applications. It is housed in a small SOT23 (TO-236AB) surface-mounted device plastic package, making it ideal for space-constrained designs. The device offers a typical DC current gain (hFE) of 100 at 150mA and 10V.
Key electrical parameters include a collector-base voltage of 60V and an emitter-base voltage of 5V. The maximum power dissipation is 250mW at an ambient temperature of 25°C. The operating and storage temperatures range from -65°C to 150°C.
With its robust specifications and compact form factor, the PMBT2222A,215 is a reliable choice for various electronic circuits requiring efficient switching and amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT2222A,215 is 30V.
The PMBT2222A,215 transistor has a maximum collector current (IC) of 600mA.
The typical DC current gain (hFE) of the PMBT2222A,215 at 150mA and 10V is 100.
The PMBT2222A,215 transistor is supplied in a SOT23 (TO-236AB) plastic surface-mounted device package.
Yes, the PMBT2222A,215 transistor is AEC-Q101 qualified.
The operating temperature range for the PMBT2222A,215 is -65°C to 150°C.