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PMBFJ308,215 The NXP Semiconductors PMBFJ308,215 is an N-channel JFET transistor in a SOT-23 package. It offers a drain-source voltage of 25V and a power dissipation of 250mW.
Mfr Part #:

PMBFJ308,215

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PMBFJ308,215 is an N-channel JFET transistor in a SOT-23 package. It offers a drain-source voltage of 25V and a power dissipation of 250mW.
✓ Total Stock: 250 pcs
$ Price Range: $1.84

PMBFJ308,215 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
250 pcs
On Request
250 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PMBFJ308,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power
Resistance
Storage Temperature
Supplier Device Package
Supplier Package
Voltage
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PMBFJ308,215 Description

Short technical summary and product information.

This NXP Semiconductors PMBFJ308,215 is a symmetrical N-channel silicon junction field-effect transistor designed for various electronic applications. It comes in a compact SOT-23 package, suitable for surface mounting.

 

Key electrical characteristics include a drain-source voltage of up to 25V and a maximum power dissipation of 250mW at 25°C ambient temperature. The transistor exhibits low noise and high gain, with interchangeable drain and source connections.

 

Applications for this JFET include the AM input stage in car radios, VHF amplifiers, and oscillators and mixers. Its features make it a versatile component for signal amplification and processing circuits.

 

The device is sensitive to ElectroStatic Discharge (ESD), requiring careful handling during transport and assembly.

PMBFJ308,215 Quick Information

Product Type: JFET
Canonical Name: N-Channel Silicon Junction Field-Effect Transistor
Subcategory: N-Channel

PMBFJ308,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMBFJ308,215 Estimated Pricing

Qty Low High
1+ $1.84 $1.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMBFJ308,215 Features

  • N-channel silicon junction field-effect transistor.
  • Low noise and high gain characteristics.
  • Interchangeable drain and source connections.
  • Surface mountable SOT-23 package.
  • Suitable for AM radio and VHF amplifier use.

PMBFJ308,215 Applications

  • Suitable for VHF amplifier circuits.
  • Used in RF oscillators and mixers.
  • Ideal for low-noise input stages.
  • Applicable in car radio input stages.
  • Suitable for high-gain switching applications.

PMBFJ308,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMBFJ308,215?

The maximum drain-source voltage (VDS) is 25V.

What is the typical gate-source cut-off voltage for the PMBFJ309 variant?

The gate-source cut-off voltage (VGSoff) for the PMBFJ309 is a maximum of -4V.

What is the maximum power dissipation of the PMBFJ308,215?

The total power dissipation (Ptot) is 250mW up to an ambient temperature of 25°C.

What is the operating temperature range for this JFET?

The junction temperature (Tj) can reach a maximum of 150°C.

What package type is the PMBFJ308,215 supplied in?

This JFET is supplied in a TO-236-3, SC-59, SOT-23-3 package, designed for surface mounting.

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