| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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180 pcs
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180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NXP Semiconductors PMBFJ110,215 is an N-channel junction field-effect transistor (JFET) designed for high-speed switching applications. It comes in a compact SOT-23 package, making it suitable for surface-mount designs.
The device offers interchangeability of drain and source connections and features a low RDSon at zero gate voltage. Key electrical specifications include a drain-source voltage of 25V, a maximum power dissipation of 250mW at 25°C, and a typical drain-source leakage current of 80mA for the PMBFJ108 variant at 15V.
Applications for this JFET include analog switches, choppers, commutators, and audio amplifiers. The operating temperature range is from -65°C to 150°C (TJ), with a junction-to-ambient thermal resistance of 500 K/W when mounted on FR4.
The SOT-23 package is a standard surface-mount type, facilitating integration into various electronic circuits. Its robust design and versatile characteristics make it a reliable component for signal switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 25 V.
The package type is SOT-23 (TO-236AB).
The maximum operating junction temperature is 150°C.
Typical applications include analog switches, choppers, commutators, and audio amplifiers.