| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | 2015 | On Request | On Request | |
|
680 pcs
|
680 pcs | On Request | 1 | On Request | On Request | 09+13 | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type |
The NXP Semiconductors PMBF170 is an N-channel enhancement mode field-effect transistor designed for various applications. It features TrenchMOS technology, providing very fast switching speeds and logic level compatibility, making it suitable for demanding electronic designs.
This MOSFET is housed in a subminiature surface mount SOT-23 package, ideal for space-constrained applications. Key electrical characteristics include a maximum drain-source voltage of 60V and a maximum continuous drain current of 300mA. The drain-source on-state resistance is specified at a maximum of 5 Ω at VGS = 10V and ID = 500mA, and 5.3 Ω at VGS = 4.5V and ID = 75mA.
Applications for the PMBF170 include relay drivers, high-speed line drivers, and logic level translators. Its robust design and performance characteristics make it a reliable component for industrial, computing, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
It is packaged in a SOT-23 surface-mount package.
The maximum gate-source voltage is ±20V.
The maximum drain current is 300mA.
The maximum junction temperature is 150°C.