| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PMBF107 is an N-channel enhancement mode vertical D-MOS transistor manufactured by NXP Semiconductors. It is designed for applications requiring high-speed switching, such as line current interruption in telephone sets, relay drivers, and line transformer drivers.
Key electrical characteristics include a maximum drain-source voltage of 200V and a continuous drain current of 100mA. The gate-source threshold voltage ranges from 0.8V to 2.4V. The transistor exhibits a drain-source on-resistance of 28 Ohms at 20mA/2.6V and 14 Ohms at 150mA/10V. Capacitance values include input capacitance (Ciss) of 50-65pF, output capacitance (Coss) of 16-25pF, and feedback capacitance (Crss) of 0-41pF, measured at 1MHz.
This device is supplied in a compact SOT23 surface-mount package. Its features include direct interface capability with CMOS and TTL logic, and it is designed to prevent secondary breakdown.
Applications include relay drivers, high-speed switching, and line transformer drivers. The transistor's characteristics make it suitable for various electronic circuits where efficient and fast switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the PMBF107 is 200V.
The continuous drain current of the PMBF107 is 100mA.
The gate-source threshold voltage for the PMBF107 ranges from 0.8V to 2.4V.
The drain-source on-resistance of the PMBF107 is a maximum of 28 Ohms at 20mA and 2.6V.
The PMBF107 is supplied in a SOT23 package.