BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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1,688 pcs
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1688 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NIKO-SEM PK610DZ is an N-Channel MOSFET belonging to the JFET category. It is housed in a PDFN 5x6 surface-mount package.
Key electrical specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 43A. The on-resistance (RDS(ON)) varies with gate-source voltage (VGS), with a maximum of 6.5mΩ at 10V and 2.3mΩ at 2.5V. The typical gate threshold voltage (VGS(th)) is 17.3V. Capacitance values include typical Ciss of 171pF, Coss of 99pF, and Crss of 17.3pF, with a total gate charge (Qg) of 4.7nC.
This MOSFET is suitable for various power switching and amplification applications where efficient current handling and low on-state resistance are required. Its surface-mount PDFN 5x6 package facilitates integration into compact electronic designs.
| Qty | Low | High |
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| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the PK610DZ is 30V.
The continuous Drain Current (ID) rating of the PK610DZ is 43A.
The typical On-Resistance (RDS(ON)) at VGS = 10V for the PK610DZ is 6.5mΩ.
The PK610DZ MOSFET is supplied in a PDFN 5x6 package.