PJT138K_R1_00001 The PANJIT PJT138K_R1_00001 is a 50V N-Channel Enhancement Mode MOSFET. It is designed for battery-operated systems and features ESD protection.
Mfr Part #:

PJT138K_R1_00001

Available from 1 distributors
Mfr Name: PANJIT
PANJIT
The PANJIT PJT138K_R1_00001 is a 50V N-Channel Enhancement Mode MOSFET. It is designed for battery-operated systems and features ESD protection.
✓ Total Stock: 1,028 pcs
$ Price Range: $1.96

PJT138K_R1_00001 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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1,028 pcs
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PJT138K_R1_00001 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

PJT138K_R1_00001 Description

Short technical summary and product information.

The PANJIT PJT138K_R1_00001 is an N-Channel Enhancement Mode MOSFET with a Drain-Source Voltage (Vdss) of 50V. It features advanced trench process technology and is specially designed for battery-operated systems, solid-state relays, and drivers for relays, displays, and memories.

 

Key electrical characteristics include a maximum Drain-Source On-State Resistance (Rds On) of 1.6 Ohms at 500mA and 10V. The Gate Threshold Voltage (Vgs(th)) is a maximum of 1.5V at 250µA. It offers an Input Capacitance (Ciss) of up to 50pF at 25V and a Gate Charge (Qg) of up to 1nC at 4.5V.

 

This MOSFET is housed in a compact SOT-363 package, suitable for surface mount applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 236mW (Ta).

 

The device includes ESD protection up to 2KV HBM and complies with the EU RoHS 2011/65/EU directive. It is also manufactured using a green molding compound as per IEC61249 Std., making it Halogen Free.

PJT138K_R1_00001 Quick Information

Product Type: MOSFET
Canonical Name: PJT138K_R1_00001 N-Channel MOSFET
Subcategory: Arrays

PJT138K_R1_00001 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead free

PJT138K_R1_00001 Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PJT138K_R1_00001 Features

  • 50V N-Channel Enhancement Mode MOSFET.
  • Low Rds(on) of 1.6 Ohm at 500mA, 10V.
  • Compact SOT-363 surface mount package.
  • ESD Protected 2KV HBM.
  • Designed for battery-operated systems.

PJT138K_R1_00001 Applications

  • Ideal for solid-state relay drivers.
  • Suitable for display drivers.
  • Used in memory drivers.
  • Applicable in battery management.

PJT138K_R1_00001 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage (Vdss) for the PJT138K_R1_00001?

The maximum Drain-Source Voltage (Vdss) is 50V.

What is the maximum Drain-Source On-State Resistance (Rds On) at 500mA and 10V?

The maximum Drain-Source On-State Resistance (Rds On) is 1.6 Ohms at 500mA and 10V.

What is the package type for the PJT138K_R1_00001 MOSFET?

The PJT138K_R1_00001 MOSFET is supplied in a SOT-363 package.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

Is the PJT138K_R1_00001 RoHS compliant?

Yes, the PJT138K_R1_00001 is RoHS3 Compliant.

Does this MOSFET meet Halogen Free requirements?

Yes, this MOSFET is Halogen Free.

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