| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 2217 | On Request | On Request |
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The Panjit PJS6812_S1_00001 is a 20V N-channel enhancement mode MOSFET. It features advanced trench process technology, making it suitable for switch load and PWM applications. The device operates with a continuous drain current of 3.7A and a pulsed drain current of 14.8A.
Key electrical characteristics include a drain-source on-state resistance as low as 41mΩ at 3.7A and 4.5V, and a gate threshold voltage of 1.2V maximum at 250µA. The input capacitance is 350pF typical at 10V and 1.0MHz.
This MOSFET is housed in a SOT-23-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The component is RoHS3 compliant and meets MSL 1 requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 20V.
The continuous drain current is 3.7A at 25°C.
The typical on-resistance is 41mΩ at 4.5V and 3.7A.
The PJS6812_S1_00001 is in a SOT-23-6 package.
The operating temperature range is -55°C to 150°C.
Yes, this component is RoHS3 Compliant.