| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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160,000 pcs
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160000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The PANJIT PJQ4441P_R2_00001 is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 8.5A at 25°C ambient temperature, and 44A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 17mOhm at 10A and 10V gate-source voltage, and a gate threshold voltage of 2.5V at 250µA. The MOSFET has an input capacitance of 2030pF and a total gate charge of 19nC.
This device is housed in a DFN3333-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The MOSFET utilizes advanced trench process technology for high density cell design and ultralow on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 40V.
The continuous drain current is 8.5A at 25°C ambient temperature and 44A at 25°C case temperature.
The Rds(on) is a maximum of 17mOhm at 10A and 10V gate-source voltage.
The MOSFET is supplied in a DFN3333-8 package.
The operating temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.