PJE8408_R1_00001 The Panjit PJE8408_R1_00001 is an N-Channel MOSFET designed for switch load and PWM applications. It features a 20V drain-source voltage and a 500mA continuous drain current.
Mfr Part #:

PJE8408_R1_00001

Available from 1 distributors
Mfr Name: PANJIT
PANJIT
The Panjit PJE8408_R1_00001 is an N-Channel MOSFET designed for switch load and PWM applications. It features a 20V drain-source voltage and a 500mA continuous drain current.
Total Stock: 35,168 pcs
$ Price Range: $2.27

PJE8408_R1_00001 Available from 1 distributor

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PJE8408_R1_00001 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PJE8408_R1_00001 Description

Short technical summary and product information.

The PJE8408_R1_00001 from Panjit is an N-Channel Enhancement Mode MOSFET. It is designed with advanced trench process technology, offering features such as low voltage drive capability starting at 1.2V. This MOSFET is suitable for applications like switch load and PWM control.

 

Key electrical specifications include a drain-source breakdown voltage of 20V and a continuous drain current of 500mA at 25°C. The on-state resistance (Rds On) is a maximum of 400mOhm at 500mA and 4.5V gate-source voltage. Input capacitance (Ciss) is 67 pF at 10V, and total gate charge (Qg) is 1.4 nC at 4.5V.

 

This component operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-523 package, suitable for surface mount applications. The device is also lead-free and compliant with EU RoHS 2.0 standards, utilizing a green molding compound.

PJE8408_R1_00001 Quick Information

Product Type: MOSFET
Canonical Name: PJE8408_R1_00001 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel

PJE8408_R1_00001 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead free

PJE8408_R1_00001 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PJE8408_R1_00001 Features

  • 20V drain-source breakdown voltage.
  • 500mA continuous drain current.
  • Low voltage drive capability.
  • SOT-523 surface mount package.
  • RoHS 2.0 compliant.

PJE8408_R1_00001 Applications

  • Suitable for low-voltage load switching applications.
  • Ideal for PWM control circuits in compact devices.
  • Used in portable electronic devices requiring SMD mounting.
  • Applicable in power management and motor control circuits.

PJE8408_R1_00001 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the PJE8408_R1_00001?

The drain-source breakdown voltage is 20V.

What is the continuous drain current of the PJE8408_R1_00001 MOSFET?

The continuous drain current is 500mA at 25°C.

What is the maximum on-state resistance (Rds On) for this MOSFET?

The maximum Rds On is 400mOhm at 500mA drain current and 4.5V gate-source voltage.

What is the operating temperature range for the PJE8408_R1_00001?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the PJE8408_R1_00001 MOSFET supplied in?

It is supplied in a SOT-523 package.

Does the PJE8408_R1_00001 meet RoHS standards?

Yes, it is RoHS3 Compliant and lead-free.

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