| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PHT8N06LT from NXP Semiconductors is a logic level N-channel enhancement mode field-effect power transistor. It is housed in a SOT223 plastic envelope suitable for surface mounting. This device is engineered for applications such as DC-DC converters and general-purpose switching.
Key electrical characteristics include a maximum drain-source voltage of 55V and a continuous drain current of 7.5A. The on-state resistance (R DS(ON)) is specified at a maximum of 80mΩ at a gate-source voltage of 5V. The transistor also features integrated zener diodes for ESD protection.
With a maximum junction temperature of 150°C and a total power dissipation of 1.8W on a PCB, the PHT8N06LT is designed for reliable operation. Its thermal resistance from junction to ambient is 70 K/W when mounted on a standard PCB.
This logic level FET is suitable for various power management tasks where efficient switching and low on-state losses are critical. The SOT223 package facilitates easy integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55V.
The maximum continuous drain current is 7.5A.
The typical on-state resistance is 65mΩ, with a maximum of 80mΩ.
The maximum junction temperature is 150°C.
The PHT8N06LT is supplied in a SOT223 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.