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PHPT61003NY The NXP Semiconductors PHPT61003NY is an NPN bipolar transistor designed for high power applications. It features a 100V collector-emitter voltage and a 3A continuous collector current.
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PHPT61003NY

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PHPT61003NY is an NPN bipolar transistor designed for high power applications. It features a 100V collector-emitter voltage and a 3A continuous collector current.
✓ Total Stock: 14,763 pcs
$ Price Range: $0.33

PHPT61003NY Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
14,493 pcs
On Request
14493 pcs On Request 1 On Request On Request 1948+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
270 pcs
On Request
270 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PHPT61003NY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PHPT61003NY Description

Short technical summary and product information.

The PHPT61003NY from NXP Semiconductors is a high power NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. It offers a maximum collector-emitter voltage (Vceo) of 100V and can handle a continuous collector current (IC) of up to 3A at ambient temperature, and up to 10A at 25°C case temperature.

 

This transistor is suitable for power switching and amplification tasks. Key electrical characteristics include a typical DC current gain (hFE) of 250 at 1A collector current and a transition frequency (fT) of 150MHz. The device is housed in a TO-247 package, which is a through-hole mounting type, facilitating easy integration into circuit boards for power dissipation up to 25W at 25°C case temperature.

 

With its high voltage and current capabilities, the PHPT61003NY is well-suited for various power management circuits, motor control, and general-purpose switching applications where reliability and performance are critical.

PHPT61003NY Quick Information

Product Type: Bipolar Transistor
Series: PHPT
Canonical Name: NPN High Power Bipolar Transistor
Subcategory: Single

PHPT61003NY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PHPT61003NY Estimated Pricing

Qty Low High
1+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

PHPT61003NY Features

  • 100V collector-emitter voltage rating.
  • 3A continuous collector current capability.
  • High power dissipation up to 25W.
  • TO-247 through-hole package.
  • Suitable for power switching applications.

PHPT61003NY Applications

  • Ideal for power supply circuits.
  • Used in motor control applications.
  • Suitable for general switching tasks.
  • Applicable in audio amplification stages.

PHPT61003NY FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the PHPT61003NY?

100V.

What is the maximum collector current?

3A at 25°C ambient temperature, 10A at 25°C case temperature.

What is the DC current gain?

Minimum 100, typical 250 at VCE=5V and IC=1A.

What is the transition frequency?

150MHz typical.

What is the package type?

TO-247.

What is the mounting type?

Through hole.

What is the collector-emitter saturation voltage?

1.2V maximum at IC=3A and IB=30mA.

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