| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,739 pcs
|
7739 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
808 pcs
|
808 pcs | On Request | 1 | On Request | On Request | 0443+ | On Request | On Request |
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| Manufacturer Name | |
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The NXP Semiconductors PHKD13N03LT is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This logic-level MOSFET is designed for applications requiring low conduction losses and simple gate drive, thanks to its low on-state resistance and low gate charge.
Key electrical specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 10.4A at 25°C. The on-state resistance (RDSon) is typically 17.2mΩ at 10A and 25°C junction temperature. Its fast switching characteristics make it suitable for high-frequency applications.
This MOSFET is qualified for use in computing, communications, consumer, and industrial applications. Specific applications include DC-to-DC converters, lithium-ion battery applications, notebook computers, and portable equipment.
The PHKD13N03LT comes in a SOT96-1 (SO8) plastic package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 10.4A at 25°C and VGS = 10V.
The typical on-state resistance is 17.2mΩ under conditions of VGS = 10V, ID = 8A, and Tj = 25°C.
The PHKD13N03LT is supplied in the SOT96-1 (SO8) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.
