PHK12NQ03LT,518 The NXP Semiconductors PHK12NQ03LT,518 is an N-channel MOSFET designed for DC-to-DC converters and portable equipment applications. It features low on-state resistance and fast switching.
Mfr Part #:

PHK12NQ03LT,518

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PHK12NQ03LT,518 is an N-channel MOSFET designed for DC-to-DC converters and portable equipment applications. It features low on-state resistance and fast switching.
✓ Total Stock: 530 pcs
$ Price Range: $2.27

PHK12NQ03LT,518 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
530 pcs
530 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

PHK12NQ03LT,518 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PHK12NQ03LT,518 Description

Short technical summary and product information.

The PHK12NQ03LT,518 from NXP Semiconductors is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. This MOSFET is designed for applications requiring low on-state resistance and fast switching capabilities.

 

Key electrical specifications include a drain-source voltage (VDS) of up to 30V and a continuous drain current (ID) of 11.8A at Tj. The on-resistance (Rds On) is a maximum of 10.5mOhm at 12A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 2V at 250µA, with a maximum gate-source voltage of ±20V.

 

This device is housed in a Surface Mount 8-SOIC package. It operates within a temperature range of -55°C to 150°C (TJ). The total power dissipation is rated at 2.5W (Ta).

 

Applications for this MOSFET include DC-to-DC converters and portable equipment. Its features make it suitable for power management in various electronic systems.

PHK12NQ03LT,518 Quick Information

Product Type: MOSFET
Canonical Name: N-channel TrenchMOS™ logic level FET
Subcategory: N-Channel

PHK12NQ03LT,518 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PHK12NQ03LT,518 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PHK12NQ03LT,518 Features

  • N-channel MOSFET with TrenchMOS technology.
  • 30V drain-source voltage rating.
  • 11.8A continuous drain current.
  • Low on-state resistance.
  • Surface mount 8-SOIC package.

PHK12NQ03LT,518 Applications

  • Suitable for DC-DC converter circuits.
  • Used in portable electronic equipment.
  • Ideal for low-voltage switching applications.
  • Applicable in power management modules.
  • Suitable for high-speed switching circuits.

PHK12NQ03LT,518 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PHK12NQ03LT,518?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 11.8A at Tj.

What is the typical on-resistance?

The on-resistance is a maximum of 10.5mOhm at 12A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the PHK12NQ03LT,518 supplied in?

It is supplied in an 8-SOIC (0.154", 3.90mm Width) package for surface mounting.

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